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PSKT132 参数 Datasheet PDF下载

PSKT132图片预览
型号: PSKT132
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅/二极管模块 [Thyristor/Diode Modules]
分类和应用: 可控硅二极管
文件页数/大小: 4 页 / 210 K
品牌: POWERSEM [ POWERSEM GMBH ]
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Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 132
PSKH 132
I
TRMS
I
TAVM
V
RRM
= 2x 300 A
= 2x 130 A
= 800-1800 V
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
1
Version 1
PSKT 132/08io1
PSKT 132/12io1
PSKT 132/14io1
PSKT 132/16io1
PSKT 132/18io1
Version 1
PSKH
PSKH
PSKH
PSKH
PSKH
132/08io1
132/12io1
132/14io1
132/16io1
132/18io1
2
3
67
5
4
3
6 7 1
5 4 2
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
300
130
4750
5080
4230
4530
113 000
108 000
89 500
86 200
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/µs
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
PSKT
Version 1
3
1
5 42
PSKH
Version 1
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 500 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.5 A
non repetitive, I
T
= 500 A
di
G
/dt = 0.5 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 500 µs
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Features
International standard package
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Keyed gate/cathode twin pins
Applications
Motor control
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Contactless switches
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
3000
3600
Mounting torque (M6)
Terminal connection torque (M6)
Typical including screws
2.25-2.75/20-25 Nm/lb.in.
4.5-5.5/40-48 Nm/lb.in.
125
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling capability
Reduced protection circuits
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20