10000
I
TSM
A
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 130°C
I
2
dt
10
6
400
I
TAVM
A
I
FAVM
300
8000
A
2
s
T
VJ
= 45°C
DC
180° sin
120°
60°
30°
6000
10
5
4000
T
VJ
= 130°C
200
100
2000
0
0.001
0.01
0.1
s
t
1
10
4
1
t
ms
10
0
0
25
50
75
100
T
C
125 °C 150
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
P
tot
500
W
400
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
300
200
DC
180° sin
120°
60°
30°
100
0
0
100
200
300
A
0
25
50
75
100
125 °C 150
TA
I
TAVM/
I
FAVM
2000
P
tot
W
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
1500
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
1000
Circuit
B6
3xPSKT255 or
3xMCC255 or
3xPSKH255
3xMCD255
500
0
0
200
400
600
A
I
dAVM
0
25
50
75
100
125 °C 150
T
A
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
