PSIG PSI PSIS PSSI 75/06
10,0
mJ
E
on
t
d(on)
100
ns
75
t
E
off
4
mJ
E
off
400
ns
300
t
7,5
t
r
V
CE
= 300 V
V
GE
= ±15 V
3
5,0
50
2
t
d(off)
V
CE
= 300 V
V
GE
= ±15 V
R
G
= 22
Ω
T
VJ
= 125°C
200
2,5
E
on
R
G
= 22
Ω
T
VJ
= 125°C
42T60
25
1
100
t
f
0,0
0
40
80
I
C
A
120
0
0
42T60
0
40
80
I
C
A
0
120
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
3
mJ
600
ns
4
mJ
E
on
t
d(on)
E
on
t
r
80
ns
60
t
E
off
3
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
42T60
2
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
E
off
t
d(off)
400
t
2
40
1
200
1
0
10
20
30
40
R
G
50
Ω
60
20
0
t
f
42T60
0
10
20
30
40
R
G
50
Ω
60
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
diode
IGBT
120
A
I
CM
90
R
G
= 22
Ω
T
VJ
= 125°C
0,1
0,01
60
30
0,001
42T60
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VID...75-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
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D - 91126 Schwabach
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