PSIPM 50/06
Output Inverter IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
600
± 20
69
48
100
V
CES
10
208
V
V
A
A
A
µs
W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
Output Inverter Reverse Diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
T
C
= 25°C
T
C
= 80°C
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
(T
VJ
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.8
2.8
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
V
V
4.5
6.5
V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 125°C
0.8
4.4
mA
mA
nA
V
CE
= 0 V; V
GE
= ± 20 V
100
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 40 A
V
GE
= 15/0 V; R
G
= 22
Ω
50
55
300
30
1.8
1.4
ns
ns
ns
ns
mJ
mJ
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
2.8
nF
0.6 K/W
Maximum Ratings
56
35
A
A
Conditions
I
F
= 40 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
min.
typ. max.
2.32
1.58
15
70
2.59
V
V
A
ns
1.3 K/W
I
F
= 30 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
