V
CE
= 300V
mJ
V
GE
= ±15V
8
80
t
r
t
d(on)
E
on
ns
60
t
2,0
mJ
E
off
1,5
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
off
400
ns
300
t
E
on
6
R
G
= 33Ω
T
VJ
= 125°C
4
40
1,0
t
d(off)
200
2
0
0
Fig. 7 Typ. turn on energy and switching
E
on
V
CE
= 300V
mJ
V
GE
= ±15V
= 30A
I
3
C
T
VJ
= 125°C
4
2
1
0
0
10
Fig. 9 Typ. turn on energy and switching
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
20
0,5
100
t
f
25T60
20
40
60
A
0
0,0
25T60
0
20
40
60 A
0
I
C
I
C
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
400
ns
300
t
t
d(off)
t
d(on)
80
ns
t
r
60
t
E
off
V
CE
= 300 V
mJ
V = ±15 V
GE
I
C
= 30 A
1,5
T
VJ
= 125°C
2,0
E
on
E
off
200
1,0
40
0,5
100
25T60
t
f
20
30
40
50
60
70
Ω
80
20
0,0
25T60
0
10
20
30
40
50
60
70
Ω
80
0
R
G
R
G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
diode
IGBT
80
A
I
CM
10
K/W
Z
thJC
1
60
0,1
40
0,01
20
R
G
= 33
Ω
T
VJ
= 125°C
25T60
0,001
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
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D - 91126 Schwabach
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