PSII 35/06
Diode
40
A
I
F
30
T
VJ
=150°C
2000
nC
1500
Q
r
1000
T
VJ
= 100°C
V
R
= 300V
40
A
30
I
RM
20
T
VJ
= 100°C
V
R
= 300V
20
T
VJ
=100°C
T
VJ
= 25°C
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
10
500
10
0
0
1
V
F
2
V
0
100
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
Forward current I
F
versus V
F
Reverse recovery charge Q
r
versus -di
F
/dt
120
ns
T
VJ
= 100°C
V
R
= 300V
Peak reverse current I
RM
versus -di
F
/dt
20
V
FR
15
T
VJ
= 100°C
V
I
F
= 15A
2.0
1.6
V
FR
µs
1.2
1.5
K
f
t
rr
110
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
t
fr
100
1.0
I
RM
10
t
fr
0.8
90
Q
r
0.5
80
5
0.4
15-06A
0.0
0
40
80
120 °C 160
T
VJ
70
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.0
600 A/µs 1000
800
di
F
/dt
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
(Z
thJH
is measured using 50 µm
thermal grease)
)
10
1
FRED
Z
thJH
[K/W]
D
D
D
D
D
D
D
D
=
=
=
=
=
=
=
=
0
0.
005
0.
01
0.
02
0.
05
0.
1
0.
2
0.
5
0.1
0.01
0.00001
0.0001
0.001
0.01
t(s)
0.1
1
10
0.001
100
Transient thermal resistance junction to heatsink
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
