PSII 35/06
Diode
40
2000
nC
40
T = 100°C
VVRJ= 300V
T = 100°C
VVRJ= 300V
A
A
30
1500
1000
500
0
30
IF
IRM
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
I = 30A
IF= 15A
IFF=7.5A
20
10
0
20
10
0
I = 30A
IF= 15A
IFF=7.5A
A/µs
0
1
2
V
100
1000
0
200 400 600 800 1000
A/µs
-diF/dt
VF
-diF/dt
Forward current IF versus VF
Reverse recovery charge Qr
versus -diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
1.0
0.5
0.0
120
ns
20
V
1.6
T =100°C
VVRJ= 300V
T = 100°C
IFVJ = 15A
VFR
µ
s
VFR
tfr
110
trr
15
1.2
0.8
0.4
0.0
Kf
I = 30A
IF= 15A
IFF=7.5A
100
90
t fr
10
5
IRM
Qr
80
15-06A
70
0
A/µs
0
40
80
120
TVJ
160
0
200 400 600 800 1000
0
200 400 600 800 1000
diF/dt
°C
A/µs
-diF/dt
Dynamic parameters Qr, IRM
Recovery time trr versus -diF/dt
Peak forward voltage VFR and tfr
versus diF/dt
versus TVJ
10
(ZthJH is measured using 50 µm
thermal grease)
1
FRED
ZthJH [K/W]
D =0
0.1
D =0.005
D =0.01
D =0.02
D =0.05
D =0.1
D =0.2
D =0.5
0.01
0.001
100
0.00001
0.0001
0.001
0.01
0.1
1
10
t(s)
Transient thermal resistance junction to heatsink
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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