15
mJ
E
on
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 47
Ω
T
VJ
= 125°C
150
ns
100 t
E
off
12
mJ
t
d(off)
E
off
600
ns
400 t
10
8
V
CE
= 600V
V
GE
= ±15V
R
G
= 47Ω
T
VJ
= 125°C
t
d(on)
t
r
5
50
4
200
E
on
0
42T120
0
20
40
I
C
A
60
0
0
t
f
0
20
40
I
C
A
42T120
0
60
Fig. 7 Typ. turn on energy and switching
4
mJ
E
on
3
E
on
2
1
0
0
20
Fig.
9 Typ. turn on energy and switching
60
A
I
CM
40
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
t
d(on)
160
ns
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
t
d(off)
800
ns
600
t
8
mJ
120
t
E
off
6
E
off
t
r
80
4
400
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
40
2
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 25 A
T
VJ
= 125°C
200
t
f
42T120
40
60
80
Ω
100
0
0
42T120
0
20
40
60
80
Ω
100
0
R
G
R
G
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
diode
10
K/W
1
R
G
= 47
Ω
T
VJ
= 125°C
Z
thJC
IGBT
0,1
0,01
0,001
single pulse
20
0
42T120
0
200
400
600
800 1000 1200 1400
V
V
CE
0,0001
0,00001 0,0001 0,001
MDI...50-12P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
