PSII 3x10/06
Diode
30
A
25
I
F
20
15
10
5
0
0.0
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
1.4
T = 100°C
nC
VJ
V = 300V
1.2
R
Q
r
1.0
0.8
0.6
0.4
0.2
0.0
100
I
RM
40
T
VJ
= 100°C
A
V
R
= 300V
30
I
F
= 20A
I
F
= 10A
I
F
= 5A
I
F
= 20A
I
F
= 10A
I
F
= 5A
20
10
0.5
1.0
1.5
V
F
2.0 V 2.5
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
Forward current I
F
versus V
F
Reverse recovery charge Q
r
versus -di
F
/dt
120
ns
110
100
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100°C
V
R
= 300V
Peak reverse current I
RM
versus -di
F
/dt
20
V
V
FR
15
t
fr
V
FR
2.0
1.2
µs
0.9
t
fr
1.5
K
f
1.0
I
RM
t
rr
90
80
10
0.6
0.5
Q
r
5
T
VJ
= 100°C
I
F
= 10A
0.3
70
0.0
0
40
80
120 °C 160
T
VJ
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.0
600 A/µs 1000
800
di
F
/dt
8-06A
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
10
(Z
thJH
is measured using 50 µm
thermal grease)
1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fred
Z
thJH
[K/W]
0.1
0.01
0.001
t(s)
Transient thermal resistance junction to heatsink
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
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