PSIG PSI PSIS PSSI 50/06
8
V
CE
= 300V
mJ
V
GE
= ±15V
80
t
r
t
d(on)
E
on
ns
60
t
40
2,0
mJ
E
off
1,5
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
off
400
ns
300
t
E
on
6
R
G
= 33Ω
T
VJ
= 125°C
t
d(off)
200
4
1,0
2
20
0,5
t
f
100
0
0
20
40
I
C
25T60
0
0,0
0
20
40
I
C
25T60
0
60
A
60 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
2,0
V
CE
= 300 V
mJ
V = ±15 V
GE
I
C
= 30 A
1,5
T
VJ
= 125°C
E
on
V
CE
= 300V
mJ
V
GE
= ±15V
I
= 30A
3
C
T
VJ
= 125°C
4
t
d(on)
80
ns
400
t
d(off)
ns
300
E
off
t
t
r
E
on
60
t
E
off
2
1,0
40
200
1
0,5
t
f
100
0
0
10
20
30
40
50
R
G
25T60
20
0,0
0
10
20
30
40
50
R
G
25T60
0
60
70
Ω
80
60
70
Ω
80
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
10
K/W
Z
thJC
1
IGBT
diode
80
A
I
CM
60
0,1
40
0,01
20
R
G
= 33
Ω
T
VJ
= 125°C
0,001
25T60
single pulse
0
0
100
200
300
400
500
600
V
CE
700
V
0,0001
0,00001 0,0001 0,001
VDI...50-06P1
0,01
0,1
t
1
s 10
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
©
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
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D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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