PSIG PSIS PSSI 100/12
40
mJ
E
on
E
on
t
d(on)
t
r
160
ns
120
t
20
mJ
E
off
15
E
off
t
d(off)
800
ns
600
t
400
30
20
80
10
V
CE
= 600V
V
GE
= ±15V
10
V
CE
= 600V
V
GE
= ±15V
40
R
G
= 15Ω
T
J
= 125°C
121T120
5
R
G
= 15Ω
200
T
J
= 125°C
121T120
0
0
50
100
I
C
150
A
0
0
t
f
0
50
100
I
C
150 A
0
Fig. 7 Typ. turn on energy and switching
times versus collector current
25
mJ
200
ns
160
t
120
t
r
80
40
0
48
Ω
56
121T120
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
E
off
2000
t
d(off)
ns
1600
t
E
off
1200
800
400
121T120
20
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
t
d(on)
E
on
20
15
10
5
0
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
15
10
5
0
0
8
16
24
32
40
R
G
0
8
16
24
32
R
G
40
0
48
Ω
56
t
f
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
1
K/W
0,1
Z
thJC
0,01
R
G
= 15Ω
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
200
A
160
I
CM
120
80
40
0
121T120
diode
IGBT
0,001
0,0001
single pulse
VID...125-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
POWERSEM [ POWERSEM GMBH ]
