PSD 192
IF(OV)
------
IFSM
200
[A]
IFSM (A)
TVJ=45°C
TVJ=150°C
2800
2500
5
10
2
As
TVJ=45°C
TVJ=150°C
10
4
1.6
150
1.4
100
1.2
1
0 VRRM
50
I
F
0
T
vj
= 150°C
T
vj
= 25°C
0.5
1
1.5
V
F
[V]
2
0.8
1/2 VRRM
0.6
0.4
0
10
1 VRRM
10
1
2
10 t[ms] 10
3
10
3
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
0.07 0.03
0.11
= RTHCA [K/W]
80
85
90
95
75
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
700
[W]
600
500
PSD 192
250
DC
[A]
200
sin.180°
rec.120°
rec.60°
rec.30°
150
0.18
100
105
110
115
400
300
200
100
PVTOT
0
25
75
IFAVM
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
175
225 0
[A]
0.32
120
125
130
100
0.75
135
140
145
150
50
IdAV
0
50
100
T (°C)
C
150
200
°C
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1
K/W
Fig.5 Maximum forward current
at case temperature
Z thJK
0.5
Z thJC
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
