PSBZ 75
10
V
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10W
6
5
4
80
DC
[A]
sin.180°
rec.120°
60
rec.60°
rec.30°
1
40
20
V
G
2
1
3
ITAV
0
50
100
T (°C)
C
150
200
0.1
10
0
10
1
I
G
10
2
10
3
mA
10
4
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
K/W
1
0.8
0.6
0.4
0.2
Z th
Z
thJK
Z thJC
0.01
0.1
t[s]
1
10
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
300
[W]
250
200
0.39
95
100
75
PSBZ 75
TC
0.17 0.09 = RTHCA [K/W]
0.25
80
85
90
150
0.67
105
110
100
50
PVTOT
0
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
30
ITAVM
50
70 0
[A]
1.5
115
120
°C
125
Tamb
50
100
[K]
150
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
