PSB 75
IF(OV)
------
IFSM
200
A
10
IFSM (A)
TVJ=45°C
TVJ=150°C
850
1000
4
160
120
80
40
IF
T=25°C
VF
T=150°C
1.6
1.4
1.2
1
2
As
TVJ=45°C
TVJ=150°C
0 VRRM
0.8
1/2 VRRM
0.6
0.4
0
10
10
1
0
1 VRRM
1
1.5
V
10
t[ms] 10
2
10
3
3
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
200
[W]
175
150
125
100
75
50
25
PVTOT
0
20
IFAVM
DC
sin.180°
rec.120°
rec.60°
rec.30°
40
60 0
[A]
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
0.3 0.18
0.43
= RTHCA [K/W]
90
95
100
105
85
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
PSB 75
80
DC
[A]
70
60
50
40
30
20
10
IdAV
0
50
100
T (°C)
C
150
200
sin.180°
rec.120°
rec.60°
rec.30°
0.68
110
115
120
1.18
2.68
125
130
135
140
145
150
°C
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
2
Fig.5 Maximum forward current
at case temperature
K/W
1.5
Z thJK
Z thJC
1
0.5
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
