PSB 61
200
[A]
150
1.6
IF(OV)
------
IFSM
10
IFSM (A)
TVJ=45°C
1000
TVJ=150°C
900
4
2
As
1.4
100
1.2
TVJ=45°C
TVJ=150°C
0 VRRM
1
50
IF
0
TVJ= 150°C
TVJ= 25°C
0.8
1/2 VRRM
0.6
1 VRRM
10
0.5
1
VF[V]
1.5
2
0.4
10
0
10
1
t[ms]
10
2
10
3
3
1
2
4
t [ms]
6
10
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
95
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
PSB 61
80
[A]
60
DC
sin.180°
rec.120°
rec.60°
rec.30°
0.34 0.22
0.47
= RTHCA [K/W]
100
105
110
0.72
115
120
40
1.22
125
130
135
DC
sin.180°
rec.120°
rec.60°
rec.30°
20
IFAVM
40
60 0
[A]
20
IdAV
0
50
100
TC(°C)
150
200
2.72
140
°C
Tamb
50
100
[K]
150
145
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
2
Z thJK
Z thJC
Fig.5 Maximum forward current
at case temperature
K/W
1.5
1
0.5
Zth
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
0.01
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
