PSB 51
IF(OV)
------
IFSM
200
[A]
IFSM (A)
TVJ=45°C
TVJ=150°C
750
675
4
10
2
As
1.6
150
1.4
1.2
1
0 VRRM
TVJ=45°C
3
TVJ=150°C
100
10
50
I
F
0
T
vj
= 150°C
T
vj
= 25°C
2
0.8
1/2 VRRM
0.6
0.4
10
0
10
1
1 VRRM
10
2
1
2
4
t [ms]
6
10
0.5
1
1.5
V
F
[V]
t[ms] 10
2
10
3
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
TC
0.3 0.17
0.42
= RTHCA [K/W]
90
95
100
105
85
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
200
[W]
175
150
125
100
75
50
25
PVTOT
0
PSB 51
60
[A]
50
40
0.67
DC
sin.180°
rec.120°
rec.60°
rec.30°
110
115
120
30
20
10
IdAV
0
50
100
TC(°C)
150
200
1.17
125
130
DC
sin.180°
rec.120°
rec.60°
rec.30°
10
IFAVM
30
0
50
[A]
2.67
135
140
145
150
°C
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig.5 Maximum forward current
at case temperature
K/W
2
Z thJK
Z thJC
1
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
