PSB 125
IF(OV)
------
IFSM
200
A
10
IFSM (A)
TVJ=45°C
TVJ=150°C
1600
1800
5
2
As
160
T=150°C
1.6
1.4
1.2
1
120
80
40
IF
10
4
TVJ=45°C
TVJ=150°C
0 VRRM
0.8
1/2 VRRM
T=25°C
0.6
0.4
10
0
10
1
1 VRRM
0
VF
10
3
1
2
4
t [ms]
6
10
1
1.5
V
t[ms] 10
2
10
3
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
80
Fig. 3
∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
300
[W]
250
TC
PSB 125
85
90
95
0.19 0.11
0.28
= RTHCA [K/W]
150
[A]
100
200
0.44
105
110
115
100
DC
sin.180°
rec.120°
rec.60°
rec.30°
150
0.77
120
125
100
50
DC
sin.180°
rec.120°
rec.60°
rec.30°
50
IFAVM
100
[A]
0
Tamb
50
100
[K]
150
1.77
130
135
140
145
150
50
PVTOT
0
IdAV
0
50
100
TC(°C)
150
200
°C
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1.5
K/W
Z thJK
Fig.5 Maximum forward current
at case temperature
1
Z thJC
0.5
Zth
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM [ POWERSEM GMBH ]
