PFS7323-7329
Conditions
SOURCE = 0 V; VCC = 12 V,
TJI = -40 °C to 125 °C
Parameter
Symbol
Min
Typ
Max
Units
(Note C) (Unless Otherwise Specified)
Qspeed Diode
DC Characteristics
VR = 530 V,
TJ(D) = 25 °C
0.4
0.07
1.55
1.47
18
mA
Reverse Current
Forward Voltage
IR(D)
VR = 530 V,
TJ(D) = 100 °C
mA
IF = 3 A,
TJ(D) = 25 °C
VF
CJ
V
IF = 3 A,
TJ(D) = 100 °C
Junction Capacitance
VR = 10 V, 1 MHz
pF
Dynamic Characteristics
di/dt = 200 A/ms,
VR = 400 V
IF = 3 A
TJ(D) = 25 °C
TJ(D) = 100 °C
TJ(D) = 25 °C
TJ(D) = 100 °C
TJ(D) = 25 °C
TJ(D) = 100 °C
TJ(D) = 25 °C
TJ(D) = 100 °C
25
31
Reverse Recovery
Time
tRR
QRR
IRRM
S
ns
nC
A
di/dt = 200 A/ms,
VR = 400 V
IF = 3 A
33.5
57
Reverse Recovery
Charge
di/dt = 200 A/ms,
VR = 400 V
IF = 3 A
1.9
2.5
1
Maximum Reverse
Recovery Current
di/dt = 200 A/ms,
VR = 400 V
IF = 3 A
Softness Factor = tB/tA
-
0.45
NOTES:
A. Not tested parameter. Guaranteed by design.
B. Tested in typical Boost PFC application circuit with 22 nF capacitor between VOLTAGE MONITOR and SIGNAL GROUND pins,
and 4 MW resistor from rectified line to the VOLTAGE MONITOR pin.
C. Normally limited by internal circuitry.
25
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Rev. B 06/13
POWERINT [ Power Integrations ]
