LXA10T600, LXA10FP600
Qspeed™ Family
600 V, 10 A X-Series PFC Diode
Product Summary
General Description
This device has the lowest QRR of any 600V
IF(AVG)
10
600
94
A
V
VRRM
Silicon diode.
Its recovery characteristics
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
nC
A
increase efficiency, reduce EMI and eliminate
snubbers.
3.85
0.5
Applications
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
Pin Assignment
• DC-AC Inverters
K
Features
K
A
K
• Low QRR, Low IRRM, Low tRR
• High dIF/dt capable (1000A/µs)
• Soft recovery
A
TO-220AC
LXA010T600
FullPak
LXA10FP600
• FullPak Insulation = 2500VRMS
A
K
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Symbol Parameter
Conditions
Rating
600
Units
VRRM
Peak repetitive reverse voltage
V
A
TJ = 150 °C, TC = 118°C (TO-220AC)
TJ = 150 °C, TC = 67°C (FullPak)
60 Hz, ½ cycle
10
IF(AVG)
Average forward current
IFSM
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
70
350
A
A
IFSM
½ cycle of t=28 µs Sinusoid, TC=25 °C
TJ(MAX)
TSTG
150
°C
°C
°C
W
W
–55 to 150
300
Lead soldering temperature
Leads at 1.6 mm from case, 10 sec
TC = 25 °C (TO-220AC)
89
PD
Power dissipation
TC = 25 °C (FullPak)
35
Thermal Resistance
Symbol Resistance from:
Conditions
TO-220AC
FullPak
Rating
1.4
Units
°C/W
°C/W
Junction to case
Junction to case
Rθ
JC
3.6
Rθ
JC
www.powerint.com
January 2011