LXA08T600, LXA08B600, LXA08FP600
Qspeed™ Family
600 V, 8 A X-Series PFC Diode
Product Summary
General Description
This device has the lowest QRR of any 600V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
IF(AVG)
8
A
V
VRRM
600
82
QRR (Typ at 125 °C)
IRRM (Typ at 125 °C)
Softness tb/ta (Typ at 125 °C)
nC
A
3.5
0.55
Applications
•
•
•
Power Factor Correction (PFC) Boost Diode
Motor drive circuits
DC-AC Inverters
Pin Assignment
K
K
Features
NC
K
K
•
•
•
•
Low QRR, Low IRRM, Low tRR
A
High dIF/dt capable (1000A/µs)
Soft recovery
A
TO-220AC
TO-263AB
FullPak Insulation = 2500VRMS
LXA08T600
LXA08B600
Benefits
•
Increases efficiency
K
A
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
Enables extremely fast switching
•
A
K
TO-220 FullPak
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
LXA08FP600
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter
Conditions
Rating
600
Units
VRRM
Peak repetitive reverse voltage
V
A
TJ = 150 °C, TC = 122 °C (220AC, 263AB)
TJ = 150 °C, TC = 81°C. (FullPak)
60 Hz, ½ cycle
8
IF(AVG)
Average forward current
IFSM
Non-repetitive peak surge current
Non-repetitive peak surge current
Maximum junction temperature
Storage temperature
60
350
A
A
IFSM
½ cycle of t=28 µs Sinusoid, TC=25 °C
TJ(MAX)
TSTG
150
°C
°C
°C
W
W
–55 to 150
300
Lead soldering temperature
Leads at 1.6 mm from case, 10 sec
TC = 25 °C. (220AC, 263AB)
TC = 25°C. (FullPak)
83
PD
Power dissipation
34
www.powerint.com
January 2011