LQA06T300
Electrical Specifications at TJ= 25 °C (unless otherwise specified)
Symbol Parameter
Conditions
Min
Typ
Max
Units
DC Characteristics
IR
Reverse current
VR = 300 V, TJ = 25 °C
VR = 300 V, TJ = 125 °C
IF = 6 A, TJ = 25 °C
IF = 6 A, TJ = 150 °C
VR = 10 V, 1 MHz
-
-
-
-
-
-
25
µA
mA
V
0.24
1.6
1.34
19
-
1.9
-
VF
CJ
Forward voltage
Junction capacitance
V
-
pF
Dynamic Characteristics
tRR
QRR
IRRM
S
Reverse recovery time,
TJ=25 °C
-
-
-
-
-
-
-
-
11.5
21
-
-
ns
ns
nC
nC
A
dIF/dt =200A/µs
VR=200V, IF=6A
TJ=125 °C
TJ=25 °C
Reverse recovery charge,
8.5
13
-
dIF/dt =200A/µs
VR=200V, IF=6A
TJ =125 °C
TJ =25 °C
TJ=125 °C
TJ =25 °C
TJ=125 °C
27
Maximum reverse
recovery current,
1.15
1.87
0.7
0.7
1.6
-
dIF/dt =200A/µs
VR=200V, IF=6A
A
-
dIF/dt =200A/µs
VR=200V, IF=6A
t
t
b
a
Softness =
-
Note to component engineers: Q-series diodes employ Schottky technologies in their design and construction.
Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups.
(For further details, see application note AN-300.)
VR
D1
DUT
L1
IF
tRR
15V
+
Pulse generator
dIF/dt
Rg
ta
tb
Q1
0
0.1xIRRM
IRRM
Figure 2. Reverse Recovery Test Circuit
Figure 1. Reverse Recovery Definitions
2
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Rev 1.2 01/11
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