MITSUBISHI Nch POWER MOSFET
FS3KM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
900
±30
—
Typ.
—
Max.
—
V
V
(BR) DSS Drain-source breakdown voltage ID = 1mA, VGS = 0V
(BR) GSS Gate-source breakdown voltage IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
Drain-source leakage current VDS = 900V, VGS = 0V
Gate-source threshold voltage ID = 1mA, VDS = 10V
V
V
—
—
IGSS
IDSS
Gate-source leakage current
—
±10
1
µA
mA
V
—
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2
3
4
Drain-source on-state resistance ID = 1.5A, VGS = 10V
Drain-source on-state voltage ID = 1.5A, VGS = 10V
—
3.08
4.62
3.5
770
77
4.00
6.00
—
Ω
—
V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
ID = 1.5A, VDS = 10V
2.1
—
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
V
Coss
Crss
VDS = 25V, VGS = 0V, f = 1MHz
—
—
—
13
—
td (on)
tr
—
15
—
VDD = 200V, ID = 1.5A, VGS = 10V,
—
15
—
td (off)
tf
Turn-off delay time
Fall time
RGEN = RGS = 50Ω
—
90
—
—
25
—
VSD
Source-drain voltage
Thermal resistance
IS = 1.5A, VGS = 0V
Channel to case
—
1.0
—
1.5
4.17
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
101
7
tw = 10ms
100ms
1ms
5
3
2
100
7
5
3
2
10ms
100ms
10–1
7
5
3
2
DC
T
C
= 25°C
Single Pulse
10–2
0
50
100
150
200
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V1@0V
10
8
2.0
1.6
1.2
0.8
0.4
0
5V
P
D
= 30W
V
GS = 20V
PD = 30W
10V
TC = 25°C
Pulse Test
4.5V
6
5V
T
C
= 25°C
4
Pulse Test
2
4V
4V
20
0
0
10
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN-SOURCE VOLTAGE V
DS (V)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
