MITSUBISHI Nch POWER MOSFET
.
ation
nge.
pecific to cha
inal se subject
af
is not limits ar
This
otice:parametric
N
Some
P
AR
IMIN
REL
Y
FL10KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
T
C
= 25°C
Pulse Test
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
32
I
D
= 15A
4
24
3
V
GS
= 10V
16
10A
2
8
5A
1
0
0
4
8
12
16
20
0
0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
1
V
DS
= 10V
7 Pulse Test
5
3
2
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
12
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
16
10
0
7
5
3
2
8
4
0
0
4
8
12
16
20
10
–1 –1
10
2
3
5 7
10
0
2
3
5 7
10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
Ciss
3
2
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
T
C
h = 25°C
V
DD
= 200V
V
GS
= 10V
t
d(off)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
3
2
10
3
7
5
3
2
Coss
10
2
7
5
3
2
t
f
10
2
7
5
3 T
C
h = 25°C
2 f = 1MH
Z
V
GS
= 0V
3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3
Crss
t
r
t
d(on)
10
1
10
1
2
3
5 7
10
0
2
3
5 7
10
1
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
