MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000EX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
(TYPICAL)
30
50
t
gq
25
20
15
10
5
40
30
t
s
t
t
gq
s
V
V
D
= 1250V
V
V
D
= 1250V
DM = 1875V
= –50A/µs
RG = 17V
= 6.0µF
S = 0.2µH
20
10
0
DM = 1875V
= 4000A
RG = 17V
S
I
T
diGQ/dt
V
C
V
C
= 6.0µF
S
L
T
S = 0.2µH
j
L
T
= 125°C
10 20 30 40 50 60 70 80 90 100
j
= 125°C
0
0
0
1000 2000 3000 4000 5000
0
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1200
1000
800
1400
1200
1000
V
V
D
= 1250V
DM = 1875V
= –50A/µs
RG = 17V
= 6.0µF
= 0.2µH
V
V
D
= 1250V
DM = 1875V
= 4000A
RG = 17V
= 6.0µF
S = 0.2µH
j = 125°C
600
800
600
400
diGQ/d
t
I
T
V
V
C
L
T
400
CS
S
L
S
T
j
= 125°C
200
1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
2.0
1.5
1.0
0.5
0
10
d
iT/dt = 500A/µs
9
8
7
6
5
300A/µs
100A/µs
V
V
D
= 1250V
DM = 1875V
= –50A/µs
RG = 17V
= 6.0µF
S = 0.2µH
4
3
2
1
0
V
I
d
C
R
D
= 1250V
GM = 50A
iG/d = 30A/µs
= 6.0µF
= 5Ω
diGQ/dt
V
t
CS
S
L
T
S
j
= 125°C
Tj = 125°C
1000 2000 3000 4000 5000
0
1000 2000 3000 4000 5000
TURN OFF CURRENT (A)
TURN ON CURRENT (A)
Aug.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
