Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings,T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM50DY-24H
–40 to 150
–40 to 125
1200
±20
Units
°C
Junction Temperature
T
j
Storage Temperature
T
°C
stg
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
V
CES
V
GES
Volts
Volts
Collector Current
I
50
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
C
Peak Collector Current
I
I
100*
CM
Diode Forward Current
I
50
F
Diode Forward Surge Current
Power Dissipation
100*
FM
P
400
d
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
–
17
–
–
26
in-lb
190
Grams
Volts
V Isolation
V
2500
RMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
1.0
0.5
7.5
3.4**
–
Units
mA
Collector-Cutoff Current
Gate Leakage Current
I
V
V
= V
, V
CES GE
= 0V
= 0V
CES
GES
CE
I
= V
, V
GES CE
–
–
µA
GE
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
I
= 5mA, V
= 10V
4.5
–
6.0
2.5
2.25
250
–
Volts
Volts
Volts
nC
GE(th)
C
CE
GE
V
I
= 50A, V
C
= 15V
CE(sat)
I
= 50A, V
GE
= 15V, T = 150°C
–
C
j
Total Gate Charge
Q
V
= 600V, I = 50A, V
GS
= 15V
–
–
G
CC
C
Diode Forward Voltage
V
I
= 50A, V
E GS
= 0V
–
3.5
Volts
FM
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
Units
nF
nF
nF
ns
Input Capacitance
C
ies
10
Output Capacitance
Reverse Transfer Capacitance
C
oes
V
= 0V, V
GE CE
= 10V, f = 1MHz
–
–
3.5
C
–
–
2
80
res
Resistive
Load
Turn-on Delay Time
t
–
–
d(on)
Rise Time
t
r
V
= 600V, I = 50A,
–
–
200
150
350
250
–
ns
CC
C
Switching
Times
Turn-off Delay Time
Fall Time
t
V
= V
= 15V, R = 6.3Ω
–
–
ns
d(off)
GE1
GE2
G
t
f
–
–
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
I
I
= 50A, di /dt = –100A/µs
–
–
ns
E
E
E
Q
= 50A, di /dt = –100A/µs
–
0.37
µC
rr
E
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Per IGBT
Min.
–
Typ.
–
Max.
0.31
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per FWDi
–
–
0.70
Per Module, Thermal Grease Applied
–
–
0.075
254
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