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BCR3AM-8 参数 Datasheet PDF下载

BCR3AM-8图片预览
型号: BCR3AM-8
PDF下载: 下载PDF文件 查看货源
内容描述: 三端双向可控硅3安培/ 400-600伏特 [Triac 3 Amperes/400-600 Volts]
分类和应用: 栅极触发装置可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 73 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
 浏览型号BCR3AM-8的Datasheet PDF文件第1页浏览型号BCR3AM-8的Datasheet PDF文件第3页浏览型号BCR3AM-8的Datasheet PDF文件第4页  
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (412) 925-7272  
BCR3AM  
Triac  
3 Amperes/400-600 Volts  
Absolute Maximum Ratings, T = 25 °C unless otherwise specified  
a
Ratings  
Symbol  
VDRM  
VDSM  
IT(RMS)  
ITSM  
BCR3AM-8  
BCR3AM-12  
Units  
Volts  
Repetitive Peak Off-state Voltage  
Non-repetitive Peak Off-state Voltage  
On-state Current, Tc = 86°C  
Non-repetitive Peak Surge, One Cycle (60 Hz)  
400  
600  
500  
720  
Volts  
3
3
Amperes  
Amperes  
A2sec  
Watts  
Watts  
Amperes  
Volts  
30  
30  
2
2
I t  
I t for Fusing, t = 8.3 msec  
3.7  
3.7  
Peak Gate Power Dissipation, 20 msec  
Average Gate Power Dissipation  
Peak Gate Current  
PGM  
PG(avg)  
IGM  
3
3
0.3  
0.5  
0.3  
0.5  
Peak Gate Voltage  
VGM  
6
6
Storage Temperature  
Operating Temperature  
Weight  
T
-40 to 125  
-40 to 125  
1.6  
-40 to 125  
-40 to 125  
1.6  
°C  
stg  
T
°C  
j
Grams  
Electrical and Thermal Characteristics, T = 25 °C unless otherwise specified  
j
Test Conditions (Trigger Mode)  
BCR3AM  
Characteristics*  
Symbol  
V
D
R
L
R
G
T
j
Min.  
Typ.  
Max.  
Units  
Gate Parameters  
DC Gate Trigger Current  
MT2+ Gate+  
MT2+ Gate–  
6V  
6V  
6V  
6  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
30  
30  
30  
mA  
mA  
mA  
I
GT  
MT2– Gate–  
DC Gate Trigger Voltage  
MT2+ Gate+  
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
1.5  
Volts  
Volts  
Volts  
MT2+ Gate–  
V
1.5  
1.5  
GT  
MT2– Gate–  
DC Gate Non-trigger Voltage  
All  
V
1/2 V  
DRM  
125°C  
0.2  
Volts  
GD  
*Characteristic values apply for either polarity of Main Terminal 2 referenced to Main Terminal 1.  
Characteristics  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
°C/W  
°C/W  
Thermal Resistance, Junction-to-case  
R
th(j-c)  
th(j-a)  
10  
80  
Steady State Thermal Resistance,  
Junction-to-ambient  
R
Voltage – Blocking State  
Repetitive Off-state Current  
I
Gate Open Circuited,  
5
2
mA  
DRM  
V
= V , T = 125°C  
DRM j  
D
Current – Conducting State  
Peak On-state Voltage  
V
T = 25°C,  
1.5  
Volts  
V/s  
TM  
c
I
= 4.5A  
TM  
Critical Rate-of-rise of Commutating  
Off-state Voltage (Commutating dv/dt)  
(Switching)  
(dv/dt)  
T = 125°C, V = 400V, Gate Open  
c
j
D
Circuited, Commutating (di/dt) = -2A/ms  
T-6