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BCR20AM-12L 参数 Datasheet PDF下载

BCR20AM-12L图片预览
型号: BCR20AM-12L
PDF下载: 下载PDF文件 查看货源
内容描述: 三端双向可控硅20安培/ 400-600伏特 [Triac 20 Ampere/400-600 Volts]
分类和应用: 栅极触发装置可控硅三端双向交流开关局域网
文件页数/大小: 4 页 / 75 K
品牌: POWEREX [ POWEREX POWER SEMICONDUCTORS ]
 浏览型号BCR20AM-12L的Datasheet PDF文件第1页浏览型号BCR20AM-12L的Datasheet PDF文件第3页浏览型号BCR20AM-12L的Datasheet PDF文件第4页  
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (412) 925-7272  
BCR20AM  
Triac  
20 Ampere/400-600 Volts  
Absolute Maximum Ratings, T = 25 °C unless otherwise specified  
a
Ratings  
Symbol  
BCR20AM-8  
BCR20AM-12  
Units  
Amperes  
Volts  
On-state Current, T = 105°C  
c
I
20  
20  
T(RMS)  
Repetitive Peak Off-state Voltage (Gate Open)  
V
400  
600  
DRM  
DSM  
TSM  
Non-repetitive Peak Off-state Voltage (Gate Open)  
Non-repetitive Peak On-state Voltage, One Cycle (60 Hz)  
V
500  
720  
Volts  
I
200  
200  
Amperes  
2
2
I t  
2
I t for Fusing, t = 8.3 msec  
167  
167  
A sec  
Peak Gate Power Dissipation, 20 sec  
Average Gate Power Dissipation  
Peak Gate Current  
P
5
5
Watts  
Watts  
Amperes  
Volts  
GM  
P
0.5  
0.5  
G(avg)  
I
2
2
GM  
Peak Gate Voltage  
V
10  
10  
GM  
Storage Temperature  
Operating Temperature  
Weight  
T
-40 to 125  
-40 to 125  
2.0  
-40 to 125  
-40 to 125  
2.0  
°C  
stg  
T
°C  
j
Grams  
Electrical and Thermal Characteristics, T = 25 °C unless otherwise specified  
j
Test Conditions (Trigger Mode)  
BCR30GM  
Typ.  
Characteristics  
Symbol  
V
D
R
L
R
G
T
j
Min.  
Max.  
Units  
Gate Parameters  
DC Gate Trigger Current  
MT2+ Gate+  
MT2+ Gate–  
I
I
I
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
30  
30  
30  
mA  
mA  
mA  
FGT  
I
RGT  
MT2– Gate–  
I
III  
RGT  
DC Gate Trigger Voltage  
MT2+ Gate+  
V
I
I
6V  
6V  
6V  
6⍀  
6⍀  
6⍀  
330⍀  
330⍀  
330⍀  
25°C  
25°C  
25°C  
1.5  
Volts  
Volts  
Volts  
FGT  
MT2+ Gate–  
V
1.5  
1.5  
RGT  
MT2– Gate–  
V
III  
RGT  
DC Gate Non-trigger Voltage  
All  
V
1/2 V  
125°C  
0.2  
Volts  
GD  
DRM  
Thermal Resistance, Junction-to-case  
R
th(j-c)  
0.8  
2
°C/W  
mA  
Voltage – Blocking State  
Repetitive Off-state Current  
I
Gate Open Circuited,  
= V , T = 125°C  
DRM  
V
D
DRM  
j
Current – Conducting State  
Peak On-state Voltage  
V
T = 25°C,  
1.5  
Volts  
TM  
c
I
= 30A  
TM  
Critical Rate-of-Rise of Commutating  
Off-state Voltage (Commutating dv/dt)  
(Switching)  
(dv/dt)  
V/s  
c
Part  
Number  
V
Commutating dv/dt,  
Commutating Voltage & Current Waveform  
DRM  
(Volts)  
(dv/dt) (V/sec) Minimum  
Test Condition  
Tj = 125°C, Rate of Decay  
On-state Commutating Current  
(Inductive Load)  
SUPPLY  
c
BCR20AM-8  
BCR20AM-8L  
400  
VOLTAGE  
t
(di/dt)  
10  
C
MAIN  
CURRENT  
t
BCR20AM-12  
BCR20AM-12L  
600  
10  
(dv/dt) = -10A/msec,  
c
V
V
Peak Off-state Voltage V = 400V  
D
D
MAIN  
VOLTAGE  
t
(dv/dt)  
C
D
T-84