POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com
PHASE CONTROL THYRISTOR
AT866HT
Repetitive voltage up to
Mean forward current
Surge current
3600 V
2166 A
29,1 kA
FINAL SPECIFICATION
Feb. 17 - Issue: 4
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
V DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
3600
3700
3600
250
V
V
V
I
I
RRM
DRM
V=VRRM
V=VDRM
mA
mA
250
CONDUCTING
I
I
I
T (AV)
T (AV)
TSM
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
2166
1722
29,1
A
A
Mean forward current
Surge forward current
I² t
Sine wave, 10 ms
without reverse voltage
125
kA
x 103
I² t
4234
1,85
A²s
V
V T
On-state voltage
Threshold voltage
On-state slope resistance
On-state current =
2000 A
25
V T(TO)
125
125
1,20
V
r
T
0,325
mohm
SWITCHING
From 75% VDRM up to 2400 A; gate 40V, 5W
Linear ramp up to 70% of VDRM
di/dt
Critical rate of rise of on-state current, min.
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
125
125
25
200
1000
3
A/µs
V/µs
µs
dv/dt
VD=100V; gate source 40V, 10W , tr=.5 µs
t
t
d
q
dv/dt = 20 V/µs linear up to 75% VDRM
di/dt = -20 A/µs, I= 1570 A
VR= 50 V
400
µs
Q rr
125
µC
A
I
I
I
rr
H
L
Peak reverse recovery current
Holding current, typical
VD=5V, gate open circuit
VD=12V, tp=30µs
25
25
300
mA
mA
Latching current, typical
1000
GATE
V GT
Gate trigger voltage
VD=12V
25
25
3,50
400
0,25
30
V
mA
V
I
GT
Gate trigger current
VD=12V
V GD
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
125
V FGM
V
I
FGM
10
A
V RGM
P GM
P G
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
2
W
W
MOUNTING
R th(j-h)
R th(c-h)
T j
Thermal impedance, DC
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
11
°C/kW
°C/kW
°C
2
-30 / 125
40.0 / 50.0
1500
F
kN
Mass
g
ORDERING INFORMATION : AT866HT S 36
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
