POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. +39 010 6556234 - Fax +39 010 6557519
Sales Office:
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS
SNUBBERLESS OPERATION
ARF794LT
Repetitive voltage up to
Mean forward current
Surge current
6000 V
1160 A
20 kA
LOW LOSSES SOFT RECOVERY
TARGET SPECIFICATION
mar 03 - ISSUE : 2
Tj
Symbol
Characteristic
Conditions
Value
Unit
[°C]
BLOCKING
V RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage
125
125
125
125
6000
6100
V
V
V RSM
I
RRM
V=VRRM
mA
V
V DC LINK
3200
CONDUCTING
I
I
I
F (AV)
F (AV)
FSM
Mean forward current
Mean forward current
Surge forward current
I² t
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
1160
1220
20
A
A
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
125
kA
I² t
2000 x1E3
5.6
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current = 1570
A
25
125
125
2.10
V
1.40
mohm
SWITCHING
Q rr
I rr
t rr
Q rr
I rr
s
Reverse recovery charge
Peak reverse recovery current
Reverse recovery time
I F = 1000 A
VR = 100 V
di/dt=
250 A/µs
125
125
µC
A
I F = 1000 A
µs
µC
A
di/dt=
VR =
500 A/µs
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
4000
1600
V
125
125
E OFF
V FR
Turn off energy dissipation
Peak forward recovery
J
di/dt=
500 A/µs
V
MOUNTING
R th(j-h)
R th(c-h)
T j
Thermal impedance
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
9.5
°C/kW
°C/kW
°C
2
-30 / 125
46.0 / 54.0
1150
F
kN
Mass
g
ORDERING INFORMATION : ARF794LT S 60
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
