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Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF612
Repetitive voltage up to
1500 V
425 A
4 kA
Mean forward current
Surge current
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150 1500
150 1600
V
V
V=VRRM
150
40
mA
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
425
A
I F (AV)
I FSM
I² t
Mean forward current
Surge forward current
I² t
425
3.8
A
kA
Sine wave, 10 ms
150
reapplied reverse voltage up to 50% VRSM
72 x1E3
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =1000
A
25
2.6
150
1.15
V
150 1.141
mohm
SWITCHING
t rr
Q rr
I rr
s
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 200 A
di/dt= 50 A/µs
4
µs
µC
A
150
150
210
105
0.4
9
VR = 100 V
V FR
di/dt= 400 A/µs
V
MOUNTING
R th(j-h)
T j
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
95
°C/kW
°C
-30 / 150
4.5 / 5.0
55
F
kN
Mass
g
ORDERING INFORMATION : ARF612 S 15
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
