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ANSALDO
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF565
Repetitive voltage up to
3200 V
1215 A
14 kA
Mean forward current
Surge current
FINAL SPECIFICATION
nov 97 - ISSUE : 02
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150 3200
150 3300
V
V
V=VRRM
150
75
mA
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
1215
A
I F (AV)
I FSM
I² t
Mean forward current
Surge forward current
I² t
1220
14
A
kA
Sine wave, 10 ms
150
reapplied reverse voltage up to 50% VRSM
980 x1E3
2.5
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =2000
A
150
150
150
1.50
V
0.500
mohm
SWITCHING
t rr
Q rr
I rr
s
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 1000 A
5.0
µs
µC
A
di/dt= 100 A/µs
150 1000
420
VR =
50 V
0.5
V FR
di/dt= 100 A/µs
150
40
V
MOUNTING
R th(j-h)
T j
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
26
°C/kW
°C
-30 / 150
18.0 / 20.0
500
F
kN
Mass
g
ORDERING INFORMATION : ARF565 S 32
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
