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FAST RECOVERY DIODE
ARF463
Repetitive voltage up to
4500 V
730 A
10 kA
Mean forward current
Surge current
FINAL SPECIFICATION
apr 97 - ISSUE : 04
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
150 4500
150 4600
V
V
V=VRRM
150
50
mA
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
730
A
I F (AV)
I FSM
I² t
Mean forward current
Surge forward current
I² t
735
10
A
kA
Sine wave, 10 ms
150
reapplied reverse voltage up to 50% VRSM
500 x1E3
2.5
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =1800
A
25
150
1.70
V
150 1.000
mohm
SWITCHING
t rr
Q rr
I rr
s
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 600 A
di/dt= 80 A/µs
5.2
µs
µC
A
150
150
650
250
0.5
60
VR = 100 V
V FR
di/dt= 400 A/µs
V
MOUNTING
R th(j-h)
T j
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
37
°C/kW
°C
-30 / 150
11.8 / 13.2
300
F
kN
Mass
g
ORDERING INFORMATION : ARF463 S 45
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
