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ANSALDO
Tx 270318 ANSUSE I -
FAST RECOVERY DIODE
ARF322
Repetitive voltage up to
1600 V
740 A
11 kA
Mean forward current
Surge current
FINAL SPECIFICATION
ott 97 - ISSUE : 04
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
V RSM
I RRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse current
125 1600
125 1700
V
V
V=VRRM
125
50
mA
CONDUCTING
I F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, double side cooled
180° square,50 Hz,Th=55°C,double side cooled
740
A
I F (AV)
I FSM
I² t
Mean forward current
Surge forward current
I² t
740
A
kA
Sine wave, 10 ms
125
11
reapplied reverse voltage up to 50% VRSM
605 x1E3
1.65
A²s
V
V FM
V F(TO)
r F
Forward voltage
Threshold voltage
Forward slope resistance
Forward current =1200
A
25
125
125
0.90
V
0.500
mohm
SWITCHING
t rr
Q rr
I rr
s
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Softness (s-factor), min
Peak forward recovery
I F = 1000 A
2.0
60
70
0.5
4
µs
µC
A
di/dt=
VR =
60 A/µs
50 V
125
V FR
di/dt= 100 A/µs
V
MOUNTING
R th(j-h)
T j
Thermal impedance
Operating junction temperature
Mounting force
Junction to heatsink, double side cooled
52
°C/kW
°C
-30 / 125
8.4 / 9.4
280
F
kN
Mass
g
ORDERING INFORMATION : ARF322 S 16
VRRM/100
standard specification
POSEICO [ POWER SEMICONDUCTORS ]
