POSEICO
AR649 RECTIFIER DIODE
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION nov 02 - ISSUE : 03
FORWARD CHARACTERISTIC
Tj = 175 °C
SURGE CHARACTERISTIC
Tj = 175 °C
14000
12000
10000
8000
6000
4000
2000
0
50
45
40
35
30
25
20
15
10
5
0
0.6
1.1
1.6
2.1
1
10
100
Forward Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0.001
0.01
0.1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvementPOSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.