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SC221 参数 Datasheet PDF下载

SC221图片预览
型号: SC221
PDF下载: 下载PDF文件 查看货源
内容描述: 硅栅增强型RF功率VDMOS晶体管 [SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 56 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号SC221的Datasheet PDF文件第1页  
SC221
POUT VS PIN GRAPH
SC221 Pout/Gain vs Pin Freq=850Mhz, Vds=12.5Vdc,
Idq=.2A
13.00
3.2
P1dB = 2.3 watts
2.8
2.4
2
1.6
1.2
Efficiency@2.5W = 56%
0.8
0.4
0
0
0.1
0.2
0.3
PIN IN WATTS
0.4
8.00
0.5
0.1
0
4
8
12
16
20
24
28
100
1000
CAPACITANCE VS VOLTAGE
S2C 1 DIE CAPACITANCE
12.00
Pout
11.00
Coss
10
10.00
Gain
9.00
1
Ciss
Crss
VDS IN VOLTS
IV CURVE
S2C Die 1 IV CURVE
2
1.8
1.6
1.4
ID IN AMPS
1.2
1
0.8
0.6
0.4
0.2
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
VDS IN VOLTS
vg=8v
14
vg=10v
16
18
vg=12v
20
ID & GM VS VGS
10.00
S2C Die 1 ID & GM vs VG
I
Id in amps; Gm in mhos
1.00
0.10
0.01
0
2
4
6
Vg=6v
8
10
Vgs in Volts
12
14
16
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 09/11/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com