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P282 参数 Datasheet PDF下载

P282图片预览
型号: P282
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 42 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号P282的Datasheet PDF文件第1页  
P282
POUT VS PIN GRAPH
F282 POUT VS PIN F=1000 MHZ; IDQ=0.2A; Vdd=28v
F2A 2 DIE CAPACITANCE
CAPACITANCE VS VOLTAGE
8
12.00
100
6
Coss
Ciss
4
10.00
10
2
Efficiency =35%
Crss
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
POUT
8.00
1
GAIN
1
0
5
10
15
VDS IN VOLTS
20
25
30
Vdd in Volts
IV CURVE
F2A 2 DIE IV CURVE
3
ID AND GM VS VGS
F2A 2 DIE GM & ID vs VGS
10
2.5
Id
2
1
1.5
Gm
1
0.1
0.5
0
0
2
4
6
8
10
VDS IN VOLTS
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
VGS = 10V
VGS 12V
12
14
16
18
20
0.01
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com