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P123 参数 Datasheet PDF下载

P123图片预览
型号: P123
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体栅极晶体管局域网
文件页数/大小: 2 页 / 42 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号P123的Datasheet PDF文件第1页  
P123
POUT VS PIN GRAPH
P-123 POUT vs PIN
F=850 MHZ; IDQ=0.26A; VDS=12.5V
3.5
3
2.5
POUT IN WATTS
2
14
100
CAPACITANCE VS VOLTAGE
F2C 1 DIE CAPACITANCE
13
GAIN
12
11
10
Gain in dB
10
1.5
Ciss
Coss
POUT
1
9
Efficiency = 49.4%
0.5
0
0
0.1
0.2
0.3
0.4
PIN IN WATTS
0.5
8
7
0.6
1
0
5
10
15
VDS IN VOLTS
Crss
20
25
30
IV CURVE
F2C I DIE IV CURVE
2.5
ID AND GM VS VGS
F2C 1 DIE GM & ID vs VGS
10
2
Id
1.5
1
1
0.5
0.1
Gm
0
0
2
4
6
8
Vds in Volts
10
12
14
16
0.01
0
2
4
6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com