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LP601 参数 Datasheet PDF下载

LP601图片预览
型号: LP601
PDF下载: 下载PDF文件 查看货源
内容描述: 硅栅增强型RF功率LDMOS晶体管7.0瓦的单端封装形式AP [SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style AP]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 52 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号LP601的Datasheet PDF文件第1页  
LP601
POUT VS PIN GRAPH
LP 6 0 1 P out/G a in vs P in F re q= 1 .5 G H z ,
V ds= 2 8 V dc, I dq= .4 A
10
13
13
8
P out
6
Gain
11
4
11
10
2
E fficiency @ 10 watts = 35%
0
0
0.2
0.4
0.6
P in in W a tts
0.8
1
10
9
12
12
CAPACITANCE VS VOLTAGE
100
L6B 1 DICE CAPACITANCE
Coss
CAPACITANCE IN PFS
10
Ciss
1
Crss
0.1
0
4
8
12
16
20
24
28
VDS IN VOLTS
IV CURVE
L6B 1 DIE IV
4
3.5
3
ID IN AMPS
2.5
2
1.5
1
0.5
0
0
vg=2v
2
4
Vg=4v
6
8
10
12
14
VDS IN
Vg=6v
VOLTS
vg=8v
16
0
18
20
vg=12v
ID & GM VS VGS
L6B 1 DIE ID & GM Vs VG
10.00
Id in amps; Gm in mhos
Id
1.00
0.10
gM
0.01
0
2
4
6
8
10
Vgs in Volts
12
14
16
18
Zin Zout
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
.XXX +/-.005 inches
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com