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F1260 参数 Datasheet PDF下载

F1260图片预览
型号: F1260
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 42 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1260的Datasheet PDF文件第1页  
F1260
POUT VS PIN GRAPH
F1260 POUT VS PIN F=175 MHZ; IDQ=1.6A;
VDS=12.5V
70
60
50
40
30
20
10
0
0
1
2
3
PIN IN WATTS
CAPACITANCE VS VOLTAGE
F1C 4 DIE CAPACITANCE
16.00
15.00
14.00
13.00
1000
Coss
Ciss
100
12.00
Efficiency = 65%
11.00
10.00
9.00
4
5
6
POUT
10
0
5
10
15
VDS IN VOLTS
Crss
7
GAIN
20
25
30
IV CURVE
F1C 4 DIE IV CURVE
35
30
ID AND GM VS VGS
F1C 4 DIE GM & ID vs VGS
100
Id
25
20
15
10
Gm
10
1
5
0
0
2
4
6
8
10
Vds in Volts
12
14
16
18
20
0.1
0
2
4
6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com