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F1070 参数 Datasheet PDF下载

F1070图片预览
型号: F1070
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 41 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1070的Datasheet PDF文件第1页  
F1070
POUT VS PIN GRAPH
F-1070 POUT vs PIN
F=175 MHZ; IDQ=1.6A; VDS=28V
250
17
1000
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
200
POUT IN WATTS
GAIN
POUT
16
Gain in dB
150
15
Coss
100
Ciss
100
14
50
Efficiency = 66.67%
13
Crss
0
0
2
4
6
8
10
PIN IN WATTS
12
14
16
12
10
0
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 4DIE IV CURVE
30
ID AND GM VS VGS
F1B 4 DIE GM & ID vs VGS
100
25
Id
20
10
15
10
1
5
Gm
0
0
2
4
6
8
10
Vds in Volts
12
14
16
18
20
0.1
0
2
4
6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com