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F1027 参数 Datasheet PDF下载

F1027图片预览
型号: F1027
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 43 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1027的Datasheet PDF文件第1页  
F1027
POUT VS PIN GRAPH
F1027 PIN VS POUT F=175 MHZ; IDQ=2.4A; VDS=28.0V
CAPACITANCE VS VOLTAGE
F1B 6 DICE CAPACITANCE
300
19
18
1000
250
17
200
POUT
GAIN
16
15
Ciss
Coss
150
14
100
13
100
Crss
12
50
11
0
0
2
4
6
8
10
PIN IN WATTS
10
12
14
16
18
20
10
0
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 6 DICE IV CURVE
40
35
ID AND GM VS VGS
F1B 6 DIE GM & ID vs VG
100
Id
30
25
20
15
10
5
0
0
2
4
6
8
10
Vds in Volts
10
1
Gm
12
14
16
18
20
0.1
0
2
4
6
Vgs in Volts
8
10
12
14
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com