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F1003 参数 Datasheet PDF下载

F1003图片预览
型号: F1003
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 41 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1003的Datasheet PDF文件第1页  
F1003
POUT VS PIN GRAPH
F1003 POUT vs PIN Idq=0.6A F=100 Mhz Vds=28v
100
90
80
70
60
50
40
30
20
Efficiency = 60%
10
0
0
1
2
3
4
PIN IN WATTS
POUT
GAIN
CAPACITANCE VS VOLTAGE
F1B 3DIE CAPACITANCE
20
19
18
17
16
15
14
13
12
11
10
100
1000
Coss
Ciss
Crss
10
0
5
10
15
VDS IN VOLTS
5
6
7
8
20
25
30
IV CURVE
F1B 3DIE IV CURVE
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
Vds in Volts
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
ID AND GM VS VGS
F1B 3 DIE GM & ID vs VG
100
Id
10
1
Gm
12
14
16
18
20
0.1
0
2
4
6
Vgs in Volts
8
10
12
14
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com