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F1001 参数 Datasheet PDF下载

F1001图片预览
型号: F1001
PDF下载: 下载PDF文件 查看货源
内容描述: PATENTED金金属化的硅栅增强型RF功率VDMOS晶体管 [PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 40 K
品牌: POLYFET [ POLYFET RF DEVICES ]
 浏览型号F1001的Datasheet PDF文件第1页  
F1001
POUT VS PIN GRAPH
F1001 POUT vs PIN IDQ=0.1A; F=175 MHZ VDS=28V
CAPACITANCE VS VOLTAGE
F1B 1 DIE Capacitance vs Vds
20
19
100
35
30
18
25
20
15
10
Efficiency = 75%
5
11
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
17
16
15
14
13
12
10
Coss
Ciss
Crss
10
PIN IN WATTS
POUT
GAIN
1
0
5
10
15
VDS IN VOLTS
20
25
30
IV CURVE
F1B 1DIE IV CURVE
ID AND GM VS VGS
F1B 1 DIE GM & ID vs VG
6
10
Id
5
4
1
3
2
0.1
1
Gm
0
0
2
4
6
8
10
Vds in Volts
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
Vg = 10V
Vg = 12V
12
14
16
18
20
0.01
0
2
4
6
8
10
12
14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com