TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
FOR ERICSSON COMPONENTS SLICS
AUGUST 1997 - REVISED DECEMBER 1999
TYPICAL CHARACTERISTICS
DISTRIBUTION LIMITS OF
THYRISTOR LIMITING VOLTAGE
vs
TIME
AI6XAW
50 devices tested from 10 wafer lots
0.5/700 Waveform
I
T
= -20 A
T
A
= 25°C
V
GG
= -50 V
0
-10
V
K
- Cathode Voltage - V
-20
-30
-40
-50
-60
6
DISTRIBUTION LIMITS OF
DIODE FORWARD VOLTAGE
vs
TIME
AI6XAX
5
V
F
- Forward Voltage - V
4
3
2
50 devices tested from 10 wafer lots
0.5/700 Waveform
I
F
= 20 A
T
A
= 25°C
V
GG
= -50 V
0.4 0.5 0.6 0.7 0.8
Time - µs
0.9 1.0
1
-70
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time - µs
0
0.0 0.1 0.2 0.3
Figure 7
CUMULATIVE POPULATION %
vs
PEAK LIMITING VOLTAGE
TC6XAB
99·999
99·99
99·9
Cumulative Population - %
99
I
F
- Forward Current - A
90
70
50
30
10
1
0·1
0·01
0·001
4
5
6
7
8
9 10
Peak Limiting Voltage - V
15
0.01
0.5
0.6
DIODE
V
FRM
THYRISTOR
V
GG
- V
(BO)
0.02
50 devices tested from 10 wafer lots
I
F
= 20 A, I
T
= -20 A, 0.5/700 Waveform
T
A
= 25°C, V
GG
= -50 V
1
0.7
0.4
Figure 8
DIODE FORWARD CURRENT
vs
FORWARD VOLTAGE
TC61AD
85°C
0.2
25°C
0.1
0.07
0.04
-40°C
0.7
0.8
0.9
1.0
V
F
- Forward Voltage - V
1.1
1.2
Figure 9
Figure 10
PRODUCT
INFORMATION
7
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