TISP7072F3, TISP7082F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
electrical characteristics for all terminal pairs, T
A
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
V
(BO)
Repetitive peak off-
state current
Breakover voltage
TEST CONDITIONS
V
D
= V
DRM
, 0 °C < T
A
< 70 °C
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
I
(BO)
V
T
I
H
dv/dt
I
D
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
C
off
Off-state capacitance
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
(see Note 4)
NOTE
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First five capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
V
d
= 1 V rms, V
D
= 0
V
d
= 1 V rms, V
D
= -1 V
V
d
= 1 V rms, V
D
= -2 V
V
d
= 1 V rms, V
D
= -5 V
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
DTR
= 0
53
56
51
43
25
29
±0.15
±5
±10
69
73
66
56
33
37
pF
±0.1
±0.8
±5
A
V
A
kV/µs
µA
‘7072F3
‘7082F3
±90
±100
V
‘7072F3
‘7082F3
MIN
TYP
MAX
±10
±72
±82
UNIT
µA
V
PRODUCT
INFORMATION
3
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