TISP61089A
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JUNE 1999
electrical characteristics, T
J
= 25°C (unless otherwise noted)
PARAMETER
I
D
Off-state current
V
D
= V
DRM
, I
G
= 0
TEST CONDITIONS
T
J
= 25°C
T
J
= 85°C
-57
-60
-60
-64
3
6
8
8
12
-150
T
J
= 25°C
T
J
= 85°C
-5
-50
5
2.5
0.1
100
50
mA
µA
µA
mA
V
µC
pF
pF
V
V
V
MIN
TYP
MAX
-5
-50
UNIT
µA
µA
2/10 µs, I
T
= -56 A, R
S
= 45
Ω,
V
GG
= -48 V, C
G
= 220 nF
V
(BO)
Breakover voltage
2/10 µs, I
T
= -100 A, R
S
= 50
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 µs, I
T
= -53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 µs, I
T
= -96 A, R
S
= 52
Ω,
V
GG
= -48 V, C
G
= 220 nF
V
F
Forward voltage
Peak forward recovery
voltage
Holding current
Gate reverse current
Gate trigger current
Gate trigger voltage
Gate switching charge
Anode-cathode off-
state capacitance
I
F
= 5 A, t
w
= 200 µs
2/10 µs, I
F
= 56 A, R
S
= 45
Ω,
V
GG
= -48 V, C
G
= 220 nF
V
FRM
2/10 µs, I
F
= 100 A, R
S
= 50
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 µs, I
F
= 53 A, R
S
= 47
Ω,
V
GG
= -48 V, C
G
= 220 nF
1.2/50 µs, I
F
= 96 A, R
S
= 52
Ω,
V
GG
= -48 V, C
G
= 220 nF
I
H
I
GKS
I
GT
V
GT
Q
GS
C
AK
I
T
= -1 A, di/dt = 1A/ms, V
GG
= -48 V
V
GG
= V
GK
= V
GKRM
, V
KA
= 0
I
T
= 3 A, t
p(g)
≥
20 µs, V
GG
= -48 V
I
T
= 3 A, t
p(g)
≥
20 µs, V
GG
= -48 V
1.2/50 µs, I
T
= 53 A, R
S
= 47
Ω,
V
GG
= -48 V C
G
= 220 nF
f = 1 MHz, V
d
= 1 V, I
G
= 0, (see Note 3)
V
D
= -3 V
V
D
= -48 V
NOTE
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
device terminals are a.c. connected to the guard terminal of the bridge.
thermal characteristics
PARAMETER
TEST CONDITIONS
T
A
= 25 °C, EIA/JESD51-3
R
θJA
Junction to free air thermal resistance
PCB, EIA/JESD51-2
environment, P
TOT
= 1.7 W
D Package
P Package
MIN
TYP
MAX
120
°C/W
100
UNIT
PRODUCT
INFORMATION
3
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