TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ
FORWARD-CONDUCTING
UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
‘5070
Repetitive peak off-state voltage, (see Note 1)
‘5080
‘5110
‘5150
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
Exponential current ramp, Maximum ramp value < 140 A
di
T
/dt
T
J
T
stg
I
TSM
55
60
2.1
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
TSP
500
300
250
220
200
200
200
160
100
A
V
DRM
SYMBOL
VALUE
- 58
- 65
- 80
-120
V
UNIT
See Figure 9 for voltage values at lower temperatures.
Initially the TISP5xxxH3BJ must be in thermal equilibrium with T
J
= 25°C.
The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions.
See Figure 10 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
electrical characteristics for terminal pair, T
A
= 25°C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
V
D
= V
DRM
TEST CONDITIONS
T
A
= 25°C
T
A
= 85°C
‘5070
V
(BO)
Breakover voltage
dv/dt = -750 V/ms,
R
SOURCE
= 300
Ω
‘5080
‘5110
‘5150
dv/dt
≥
-1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Breakover current
Forward voltage
Peak forward recovery
voltage
On-state voltage
Holding current
Maximum ramp value = -500 V
di/dt = -20 A/µs, Linear current ramp,
Maximum ramp value = -10 A
I
(BO)
V
F
dv/dt = -750 V/ms,
I
F
= 5 A, t
W
= 500 µs
dv/dt
≤
+1000 V/µs, Linear voltage ramp,
V
FRM
Maximum ramp value = +500 V
di/dt = +20 A/µs, Linear current ramp,
Maximum ramp value = +10 A
V
T
I
H
I
T
= -5 A, t
W
= 500 µs
I
T
= -5 A, di/dt = +30 mA/ms
-0.15
-3
-0.6
V
A
‘5070 thru ‘5150
5
V
R
SOURCE
= 300
Ω
‘5070 thru ‘5150
‘5070
‘5080
‘5110
‘5150
-0.15
MIN
TYP
MAX
-5
-10
-70
-80
-110
-150
-80
-90
-120
-160
-0.6
3
A
V
V
V
UNIT
µA
PRODUCT
2
INFORMATION
POINN [ POWER INNOVATIONS LTD ]
