TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
absolute maximum ratings at
25°C case temperature (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
Initial rate of rise of on-state current,
Junction temperature
Operating free - air temperature range
Storage temperature range
Lead temperature 1.5 mm from case for 10 s
T
stg
T
lead
Linear current ramp, Maximum ramp value < 38 A
I
TSM
di
T
/dt
T
J
I
TSP
150
60
50
38
50
50
45
50
10
250
150
0 to 70
-40 to +150
260
A rms
A/µs
°C
°C
°C
°C
A
SYMBOL
VALUE
UNIT
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics, T
J
= 25°C
PARAMETER
V
Z
∝
V
Z
Reference zener
voltage
Temperature coefficient
of reference voltage
Breakover voltage
Breakover current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
Off-state capacitance
(see Notes 4 and 5)
(see Note 4)
I
T
=
±
5 A
(see Note 4)
(see Note 6)
V
D
=
±
50 V
V
D
= 0
f = 1 kHz
110
(see Notes 4 and 5)
±
150
±
5
±
10
200
±
0.15
±
2.2
I
Z
=
±
1mA
TEST CONDITIONS
MIN
±
145
0.1
±
180
±
0.6
±
3
TYP
MAX
UNIT
V
%/
o
C
V
A
V
mA
kV/µs
µA
pF
V
(BO)
I
(BO)
V
TM
I
H
dv/dt
I
D
C
off
NOTES: 4. These parameters must be measured using pulse techniques, t
w
= 100
µs,
duty cycle
≤
2%.
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
6. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum).
.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
MIN
TYP
MAX
62.5
UNIT
°C/W
PRODUCT
INFORMATION
2
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