TIPP32, TIPP32A,TIPP32B, TIPP32C
PNP SILICON POWER TRANSISTORS
MAY 1989 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
TIPP32
V
(BR)CEO
I
C
=
-5 mA
I
B
= 0
TIPP32A
TIPP32B
TIPP32C
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
=
I
C
=
I
C
=
I
C
=
-1 A
-2 A
-2 A
-2 A
(see Notes 4 and 5)
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
20
10
-1
-1.5
V
V
TIPP32
TIPP32A
TIPP32B
TIPP32C
TIPP32/32A
TIPP32B/32C
MIN
-40
-60
-80
-100
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
-1
mA
mA
mA
V
TYP
MAX
UNIT
(see Note 4)
V
CE
= -40 V
I
CES
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE
h
fe
I
B
= -375 mA
V
CE
=
-4 V
V
CE
= -10 V
V
CE
= -10 V
I
C
= -0.5 A
I
C
= -0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
