TIP41, TIP41A, TIP41B, TIP41C
NPN SILICON POWER TRANSISTORS
DECEMBER 1970 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS633AB
I
C
- Collector Current - A
10
t
p
= 300 µs, d = 0.1 = 10%
t
p
= 1 ms, d = 0.1 = 10%
t
p
= 10 ms, d = 0.1 = 10%
DC Operation
1·0
0·1
TIP41
TIP41A
TIP41B
TIP41C
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
80
P
tot
- Maximum Power Dissipation - W
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
TIS633AB
Figure 5.
PRODUCT
INFORMATION
4